Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics which are widely used in appliions requiring
3 in Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. 3 inch diameter Silicon Carbide (SiC) Crystal Substrates, SiC Wafers Specifiions
Silicon Carbide Wafers. PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device
Product Specifiions SiC 6H SIC 4H PAM XIAMEN offers SILICON CARBIDE SUBSTRATES. SILICON CARBIDE MATERIAL PROPERTIES Polytype Single Crystal 4H Single Crystal 6H Lattice Parameters a=3.076 Å c=10.053 Å a=3.073 Å c=15.117 Å Stacking Sequence ABCB ABCACB Band-gap 3.26 eV 3.03 eV Density 3.21 · 10^3 kg/m3 3.21 · 10^3 kg/m3 Therm. Expansion Coefficient 4-5×10^-6/K […]
2019-2-26 · CETC is seeking to make good use of its close ties with business partners around the world in line with its efforts to promote the Belt and Road Initiative. Most notably, CETC has greatly enhanced its role as a major platform to facilitate economic and trade cooperation between China and other countries in the rewable energy sector and beyond.
2019-4-16 · PAM-XIAMEN offers 4H N Type silicon carbide wafers.
2019-4-9 · PAM-XIAMEN offers 4H Semi-insulating silicon carbide wafers.
2019-4-16 · PWAM offers semiconductor materials, especially for SiC wafer, SiC substate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers.We has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate and SiC wafer.As a professional company invested by the leading …
2015-12-3 · Cree Silicon Carbide Substrates and Epitaxy Supported diameters: ? 76.2 mm ? 100.0 mm ? 150.0 mm Product Specifiions 4H Silicon Carbide Substrates N
4H N Type SiC High quality single crystal SiC wafer are available for the electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with unique electrical properties and excellent thermal properties. Compared with silicon wafer and GaAs wafer, SiC wafer is more suitable for high temperature and high power devices. 4H N type […]